APT30M19JVR
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- Mfr.Part #
- APT30M19JVR
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 130A ISOTOP
- Stock
- 44,387
- In Stock ：
- 44,387
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 19m Ω @ 500mA, 10V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Additional Feature :
- High Voltage
- Published :
- 1997
- Radiation Hardening :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Chassis Mount, Screw
- Case Connection :
- Isolated
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 4
- Power Dissipation-Max :
- 700W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 21600pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 520A
- Number of Terminations :
- 4
- Package / Case :
- SOT-227-4, miniBLOC
- Terminal Form :
- UNSPECIFIED
- Mounting Type :
- Chassis Mount
- Terminal Position :
- UPPER
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Factory Lead Time :
- 19 Weeks
- Fall Time (Typ) :
- 10 ns
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Pin Count :
- 4
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- Power Dissipation :
- 700W
- Pbfree Code :
- yes
- Packaging :
- Tube
- Series :
- POWER MOS V®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 130A
- Voltage - Rated DC :
- 300V
- Current Rating :
- 130A
- Turn On Delay Time :
- 22 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 975nC @ 10V
- Rise Time :
- 33ns
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 70 ns
- Datasheets
- APT30M19JVR
N-Channel Tube 19m Ω @ 500mA, 10V ±30V 21600pF @ 25V 975nC @ 10V SOT-227-4, miniBLOC
APT30M19JVR Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 3600 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 21600pF @ 25V.This device conducts a continuous drain current (ID) of 130A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 520A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 22 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT30M19JVR Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 130A
the turn-off delay time is 70 ns
based on its rated peak drain current 520A.
APT30M19JVR Applications
There are a lot of Microsemi Corporation
APT30M19JVR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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