APT30M19JVFR
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- Mfr.Part #
- APT30M19JVFR
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 130A ISOTOP
- Stock
- 22,182
- In Stock ：
- 22,182
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- UNSPECIFIED
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 520A
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Number of Pins :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 975nC @ 10V
- Mount :
- Chassis Mount, Screw
- Mounting Type :
- Chassis Mount
- Power Dissipation-Max :
- 700W Tc
- Pin Count :
- 4
- Fall Time (Typ) :
- 10 ns
- Case Connection :
- Isolated
- Turn-Off Delay Time :
- 70 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- Additional Feature :
- FREDFET
- Packaging :
- Tube
- Factory Lead Time :
- 22 Weeks
- Current Rating :
- 130A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 130A
- Series :
- POWER MOS V®
- Rds On (Max) @ Id, Vgs :
- 19m Ω @ 500mA, 10V
- Package / Case :
- SOT-227-4, miniBLOC
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Turn On Delay Time :
- 22 ns
- Rise Time :
- 33ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- UPPER
- Published :
- 1997
- Number of Terminations :
- 4
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Number of Elements :
- 1
- Power Dissipation :
- 700W
- Input Capacitance (Ciss) (Max) @ Vds :
- 21600pF @ 25V
- Voltage - Rated DC :
- 300V
- Datasheets
- APT30M19JVFR
N-Channel Tube 19m Ω @ 500mA, 10V ±30V 21600pF @ 25V 975nC @ 10V SOT-227-4, miniBLOC
APT30M19JVFR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3600 mJ.A device's maximum input capacitance is 21600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 520A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT30M19JVFR Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 130A
the turn-off delay time is 70 ns
based on its rated peak drain current 520A.
APT30M19JVFR Applications
There are a lot of Microsemi Corporation
APT30M19JVFR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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