APT30F50S

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 1mA

Number of Pins :

3

Series :

POWER MOS 8™

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

245

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

DS Breakdown Voltage-Min :

500V

Input Capacitance (Ciss) (Max) @ Vds :

4525pF @ 25V

Pulsed Drain Current-Max (IDM) :

90A

Number of Elements :

1

Terminal Finish :

PURE MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

190m Ω @ 14A, 10V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Packaging :

Tube

Radiation Hardening :

No

Number of Terminations :

2

Terminal Form :

Gull wing

Published :

1997

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

FET Type :

N-Channel

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Vgs (Max) :

±30V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

30A

Case Connection :

DRAIN

Factory Lead Time :

23 Weeks

Power Dissipation-Max :

415W Tc

Power Dissipation :

415W

Drain to Source Voltage (Vdss) :

500V