APT25GP120BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

IGBT Type :

PT

Max Collector Current :

69A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

12ns/70ns

Current - Collector Pulsed (Icm) :

90A

Additional Feature :

ULTRA FAST, LOW CONDUCTION LOSS

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

3.9V @ 15V, 25A

JESD-609 Code :

e1

Pin Count :

3

Published :

1999

Radiation Hardening :

No

Factory Lead Time :

22 Weeks

Voltage - Collector Emitter Breakdown (Max) :

1200V

Test Condition :

600V, 25A, 5 Ω, 15V

Turn On Time :

26 ns

Collector Emitter Voltage (VCEO) :

1.2kV

Input Type :

Standard

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Turn Off Time-Nom (toff) :

197 ns

Mount :

Through Hole

Max Power Dissipation :

417W

Mounting Type :

Through Hole

Number of Terminations :

3

Switching Energy :

500μJ (on), 438μJ (off)

Case Connection :

COLLECTOR

Transistor Application :

POWER CONTROL

Package / Case :

TO-247-3

Gate Charge :

110nC

Voltage - Rated DC :

1.2kV

Series :

POWER MOS 7®

JEDEC-95 Code :

TO-247AD

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

1.2kV

Terminal Finish :

TIN SILVER COPPER

Element Configuration :

Single

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Current Rating :

69A

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ