AO6601

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Max Power Dissipation :

1.15W

FET Type :

N and P-Channel Complementary

JESD-609 Code :

e3

Continuous Drain Current (ID) :

2.3A

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

3.4A

Power Dissipation :

1.15W

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.4A, 10V

Published :

2012

Package / Case :

SC-74, SOT-457

Current - Continuous Drain (Id) @ 25°C :

3.4A 2.3A

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

285pF @ 15V

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Factory Lead Time :

18 Weeks

Mount :

Surface Mount

Radiation Hardening :

No

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Finish :

Matte Tin (Sn)

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V