2STP535FP

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Mfr.Part #
2STP535FP
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN DARL 180V 8A TO220FP
Stock
17,210
In Stock :
17,210

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Collector Base Voltage (VCBO) :
180V
Max Breakdown Voltage :
180V
Element Configuration :
Single
Additional Feature :
BUILT IN BIAS RESISTOR
Operating Temperature :
150°C TJ
Current - Collector Cutoff (Max) :
50μA
Collector Emitter Voltage (VCEO) :
180V
Collector Emitter Saturation Voltage :
2V
JEDEC-95 Code :
TO-220AB
Case Connection :
Isolated
Number of Elements :
1
Mounting Type :
Through Hole
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Max Collector Current :
8A
hFE Min :
200
Transistor Type :
NPN - Darlington
Collector Emitter Breakdown Voltage :
180V
ECCN Code :
EAR99
Pin Count :
3
Package / Case :
TO-220-3 Full Pack
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 80mA, 8A
Contact Plating :
Tin
Transistor Element Material :
SILICON
Power - Max :
37W
Emitter Base Voltage (VEBO) :
5V
Factory Lead Time :
8 Weeks
Base Part Number :
2STP
Radiation Hardening :
No
Packaging :
Tube
Number of Terminations :
3
Polarity :
NPN
Mount :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Max Power Dissipation :
37W
Datasheets
2STP535FP
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics 2STP535FP from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Base Part Number:2STP, Number of Terminations:3, Number of Pins:3, 2STP535FP pinout, 2STP535FP datasheet PDF, 2STP535FP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics 2STP535FP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics 2STP535FP


NPN - Darlington 150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole

2STP535FP Overview


In this device, the DC current gain is 1000 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 80mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 180V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.

2STP535FP Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V


2STP535FP Applications


There are a lot of STMicroelectronics
2STP535FP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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