2STP535FP
- Mfr.Part #
- 2STP535FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 180V 8A TO220FP
- Stock
- 17,210
- In Stock :
- 17,210
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 2V
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Contact Plating :
- Tin
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Polarity :
- NPN
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50μA
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 180V
- Max Collector Current :
- 8A
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 180V
- Base Part Number :
- 2STP
- Case Connection :
- Isolated
- Power - Max :
- 37W
- Collector Base Voltage (VCBO) :
- 180V
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Transistor Type :
- NPN - Darlington
- hFE Min :
- 200
- Max Power Dissipation :
- 37W
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Additional Feature :
- BUILT IN BIAS RESISTOR
- Factory Lead Time :
- 8 Weeks
- Max Breakdown Voltage :
- 180V
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Datasheets
- 2STP535FP
2STP535FP Documents

NPN - Darlington 150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
2STP535FP Overview
In this device, the DC current gain is 1000 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 80mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 180V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.
2STP535FP Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
2STP535FP Applications
There are a lot of STMicroelectronics
2STP535FP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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