2STP535FP
- Mfr.Part #
- 2STP535FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 180V 8A TO220FP
- Stock
- 17,210
- In Stock :
- 17,210
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Base Part Number :
- 2STP
- Collector Base Voltage (VCBO) :
- 180V
- hFE Min :
- 200
- Collector Emitter Saturation Voltage :
- 2V
- Element Configuration :
- Single
- Max Collector Current :
- 8A
- ECCN Code :
- EAR99
- Power - Max :
- 37W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50μA
- Transistor Type :
- NPN - Darlington
- Case Connection :
- Isolated
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Number of Elements :
- 1
- Packaging :
- Tube
- Radiation Hardening :
- No
- Max Power Dissipation :
- 37W
- Additional Feature :
- BUILT IN BIAS RESISTOR
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 180V
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 180V
- Polarity :
- NPN
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 180V
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Datasheets
- 2STP535FP
2STP535FP Documents

NPN - Darlington 150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
2STP535FP Overview
In this device, the DC current gain is 1000 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 80mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 180V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.
2STP535FP Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
2STP535FP Applications
There are a lot of STMicroelectronics
2STP535FP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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