2SK4151TZ-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Number of Elements :

1

Mount :

Through Hole

Turn-Off Delay Time :

34 ns

Turn On Delay Time :

8 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4V

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Vgs (Max) :

±10V

Number of Pins :

3

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

150V

Input Capacitance (Ciss) (Max) @ Vds :

98pF @ 10V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

10V

Operating Temperature :

150°C TJ

FET Type :

N-Channel

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0025Ohm

Rise Time :

12ns

DS Breakdown Voltage-Min :

150V

Pulsed Drain Current-Max (IDM) :

4A

Qualification Status :

Not Qualified

Power Dissipation-Max :

750mW Ta

Terminal Position :

BOTTOM

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 4V

Fall Time (Typ) :

19 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

1A

Rds On (Max) @ Id, Vgs :

1.95 Ω @ 500mA, 4V

Number of Terminations :

3

Published :

2010

Operating Mode :

ENHANCEMENT MODE