2SK4021(Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 10V

Width :

2.3mm

Continuous Drain Current (ID) :

4.5A

Fall Time (Typ) :

15 ns

Length :

6.5mm

Published :

2009

Power Dissipation-Max :

20W Tc

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

20V

Packaging :

Bulk

FET Type :

N-Channel

Number of Pins :

3

Drain to Source Voltage (Vdss) :

250V

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Package / Case :

TO-251-3 Stub Leads, IPak

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

5.5mm

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Lead Free :

Lead Free

Mounting Type :

Through Hole

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.5A, 10V