2SK1859-E
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- Mfr.Part #
- 2SK1859-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 6A TO3P
- Stock
- 5,910
- In Stock ：
- 5,910
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 3Ohm
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e2
- Power Dissipation-Max :
- 60W Tc
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Contact Plating :
- Copper, Gold, Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 6A Ta
- FET Type :
- N-Channel
- Rise Time :
- 80ns
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Fall Time (Typ) :
- 100 ns
- Factory Lead Time :
- 16 Weeks
- Rds On (Max) @ Id, Vgs :
- 3 Ω @ 3A, 10V
- Drain Current-Max (Abs) (ID) :
- 6A
- Turn-Off Delay Time :
- 125 ns
- DS Breakdown Voltage-Min :
- 900V
- Continuous Drain Current (ID) :
- 6A
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Published :
- 2004
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Number of Elements :
- 1
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-3P-3, SC-65-3
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 980pF @ 10V
- Drain to Source Voltage (Vdss) :
- 900V
- Case Connection :
- Isolated
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- Turn On Delay Time :
- 20 ns
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SK1859-E
N-Channel Tube 3 Ω @ 3A, 10V ±30V 980pF @ 10V 900V TO-3P-3, SC-65-3
2SK1859-E Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 980pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 125 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 900V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
2SK1859-E Features
a continuous drain current (ID) of 6A
the turn-off delay time is 125 ns
a 900V drain to source voltage (Vdss)
2SK1859-E Applications
There are a lot of Renesas Electronics America
2SK1859-E applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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