2SK1058-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

180 ns

Voltage - Rated DC :

160V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 10V

Turn-Off Delay Time :

60 ns

Transistor Application :

SWITCHING

Published :

2005

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Pbfree Code :

yes

Number of Channels :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Manufacturer Package Identifier :

PRSS0004ZE-A

Power Dissipation-Max :

100W Tc

Power Dissipation :

100W

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

160V

Height :

22.1mm

Gate to Source Voltage (Vgs) :

15V

Package / Case :

TO-3P-3, SC-65-3

Vgs (Max) :

±15V

Case Connection :

SOURCE

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Contact Plating :

Copper, Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

7A

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Terminal Position :

Single

Continuous Drain Current (ID) :

7A

Operating Temperature :

150°C TJ

Number of Terminations :

3

Current Rating :

7A

Number of Pins :

3

Pin Count :

4

Radiation Hardening :

No

Mount :

Through Hole