2SK1775-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

FET Type :

N-Channel

Fall Time (Typ) :

130 ns

Pulsed Drain Current-Max (IDM) :

20A

Power Dissipation-Max :

60W Tc

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1730pF @ 10V

Drain to Source Voltage (Vdss) :

900V

Terminal Finish :

Tin/Copper (Sn/Cu)

Package / Case :

TO-3P-3, SC-65-3

Packaging :

Tube

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 4A, 10V

Radiation Hardening :

No

Power Dissipation :

60W

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

DS Breakdown Voltage-Min :

900V

Rise Time :

135ns

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

8A

Published :

2005

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Turn-Off Delay Time :

185 ns

Terminal Position :

Single

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Turn On Delay Time :

25 ns

Mount :

Through Hole

JESD-609 Code :

e2

Drain Current-Max (Abs) (ID) :

8A

Mounting Type :

Through Hole

Number of Pins :

3