2SK1339-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Copper (Sn/Cu)

Drain Current-Max (Abs) (ID) :

3A

Fall Time (Typ) :

55 ns

Number of Elements :

1

Drain to Source Voltage (Vdss) :

900V

Drain-source On Resistance-Max :

7Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Radiation Hardening :

No

Published :

2005

Operating Temperature :

150°C TJ

Number of Pins :

3

JESD-609 Code :

e2

Case Connection :

DRAIN

Power Dissipation-Max :

80W Tc

DS Breakdown Voltage-Min :

900V

Package / Case :

TO-3P-3, SC-65-3

Rise Time :

40ns

Turn-Off Delay Time :

50 ns

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

425pF @ 10V

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Pin Count :

4

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

7 Ω @ 1.5A, 10V

Vgs (Max) :

±30V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

7A

Mounting Type :

Through Hole

Turn On Delay Time :

10 ns

Mount :

Through Hole

Continuous Drain Current (ID) :

3A

Transistor Application :

SWITCHING