2SC6099-TL-E
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- Mfr.Part #
- 2SC6099-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A TPFA
- Stock
- 1,576
- In Stock ：
- 1,576
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 800mW
- Power Dissipation :
- 800mW
- Collector Emitter Voltage (VCEO) :
- 165mV
- Element Configuration :
- Single
- Number of Pins :
- 3
- Factory Lead Time :
- 2 Weeks
- Length :
- 6.5mm
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6.5V
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- JESD-609 Code :
- e6
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 2A
- Pbfree Code :
- yes
- Frequency :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 120V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Width :
- 5.5mm
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- hFE Min :
- 300
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 100V
- Published :
- 2012
- Collector Emitter Saturation Voltage :
- 165mV
- Vce Saturation (Max) @ Ib, Ic :
- 165mV @ 100mA, 1A
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Height :
- 2.3mm
- Datasheets
- 2SC6099-TL-E
NPN 150°C TJ 1μA ICBO 1 Elements TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SC6099-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 165mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6.5V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 2A volts.
2SC6099-TL-E Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of 165mV
the vce saturation(Max) is 165mV @ 100mA, 1A
the emitter base voltage is kept at 6.5V
2SC6099-TL-E Applications
There are a lot of ON Semiconductor
2SC6099-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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