2SC6096-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

100mV

Package / Case :

TO-243AA

Collector Emitter Breakdown Voltage :

100V

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Surface Mount :

yes

hFE Min :

300

Pin Count :

3

Max Power Dissipation :

1.3W

Gain Bandwidth Product :

300MHz

Number of Pins :

3

Case Connection :

COLLECTOR

Terminal Form :

Flat

Power - Max :

1.3W

Packaging :

Tape and Reel (TR)

Transition Frequency :

300MHz

Collector Emitter Voltage (VCEO) :

150mV

Max Collector Current :

2A

Number of Elements :

1

Lead Free :

Lead Free

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100mA 5V

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

120V

Emitter Base Voltage (VEBO) :

6.5V

Element Configuration :

Single

ECCN Code :

EAR99

Published :

2007

Factory Lead Time :

8 Weeks

Vce Saturation (Max) @ Ib, Ic :

150mV @ 100mA, 1A

JESD-609 Code :

e6

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

1μA ICBO

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Max Breakdown Voltage :

100V