2SC6095-TD-E
- Mfr.Part #
- 2SC6095-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 2.5A PCP
- Stock
- 8,777
- In Stock :
- 8,777
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 2.5mm
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Current - Collector (Ic) (Max) :
- 2.5A
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Package / Case :
- TO-243AA
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 11 hours ago)
- Polarity/Channel Type :
- NPN
- Height :
- 1.5mm
- Max Collector Current :
- 2.5A
- Transistor Type :
- NPN
- Factory Lead Time :
- 14 Weeks
- JESD-609 Code :
- e6
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Terminal Form :
- Flat
- Operating Temperature :
- 150°C TJ
- Max Frequency :
- 1MHz
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 50mA, 1A
- Number of Pins :
- 3
- Transition Frequency :
- 350MHz
- Emitter Base Voltage (VEBO) :
- 6.5V
- hFE Min :
- 300
- Max Power Dissipation :
- 3.5W
- Length :
- 4.5mm
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 120V
- Collector Emitter Saturation Voltage :
- 100mV
- Power - Max :
- 1.3W
- Reach Compliance Code :
- not_compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Gain Bandwidth Product :
- 350MHz
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Number of Elements :
- 1
- Datasheets
- 2SC6095-TD-E
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NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC6095-TD-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 100mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 150mV @ 50mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6.5V.Parts of this part have transition frequencies of 350MHz.During maximum operation, collector current can be as low as 2.5A volts.
2SC6095-TD-E Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 150mV @ 50mA, 1A
the emitter base voltage is kept at 6.5V
a transition frequency of 350MHz
2SC6095-TD-E Applications
There are a lot of ON Semiconductor
2SC6095-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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