2SC6082-EPN-1E
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- Mfr.Part #
- 2SC6082-EPN-1E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 50V 15A TO220F-3SG
- Stock
- 3,591
- In Stock ：
- 3,591
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 375mA, 7.5A
- Package / Case :
- TO-220-3 Full Pack
- Collector Emitter Voltage (VCEO) :
- 400mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 50V
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 2W
- Frequency - Transition :
- 195MHz
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 330mA 2V
- Power - Max :
- 2W
- Packaging :
- Tube
- Factory Lead Time :
- 21 Weeks
- Max Collector Current :
- 15A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Datasheets
- 2SC6082-EPN-1E
NPN 10μA ICBO TO-220-3 Full Pack Tube Through Hole
2SC6082-EPN-1E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 330mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 375mA, 7.5A.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
2SC6082-EPN-1E Features
the DC current gain for this device is 200 @ 330mA 2V
the vce saturation(Max) is 400mV @ 375mA, 7.5A
2SC6082-EPN-1E Applications
There are a lot of ON Semiconductor
2SC6082-EPN-1E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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