2SC6082-1E
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- Mfr.Part #
- 2SC6082-1E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 50V 15A TO220F-3SG
- Stock
- 11,077
- In Stock ：
- 11,077
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Package / Case :
- TO-220-3 Full Pack
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 375mA, 7.5A
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Max Collector Current :
- 15A
- Packaging :
- Tube
- Gain Bandwidth Product :
- 195MHz
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 330mA 2V
- Continuous Collector Current :
- 15A
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 2W
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 23W
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 200mV
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- hFE Min :
- 200
- Mounting Type :
- Through Hole
- Datasheets
- 2SC6082-1E
NPN 150°C TJ 10μA ICBO NPN TO-220-3 Full Pack Tube Through Hole
2SC6082-1E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 330mA 2V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 375mA, 7.5A.In order to achieve high efficiency, the continuous collector voltage should be kept at 15A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Collector current can be as low as 15A volts at its maximum.
2SC6082-1E Features
the DC current gain for this device is 200 @ 330mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 375mA, 7.5A
the emitter base voltage is kept at 6V
2SC6082-1E Applications
There are a lot of ON Semiconductor
2SC6082-1E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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