2SC6026MFVGR,L3F
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- Mfr.Part #
- 2SC6026MFVGR,L3F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A VESM
- Stock
- 2,153
- In Stock ：
- 2,153
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Cut Tape (CT)
- Published :
- 2014
- Collector Emitter Breakdown Voltage :
- 50V
- Length :
- 1.2mm
- Continuous Collector Current :
- 150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Max Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transistor Type :
- NPN
- Contact Plating :
- Silver, Tin
- Package / Case :
- SOT-723
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 50V
- Width :
- 800μm
- Collector Base Voltage (VCBO) :
- 60V
- hFE Min :
- 120
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 150mV
- Max Power Dissipation :
- 150mW
- Max Collector Current :
- 150mA
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Height :
- 500μm
- Factory Lead Time :
- 12 Weeks
- Gain Bandwidth Product :
- 60MHz
- Mount :
- Surface Mount
- Datasheets
- 2SC6026MFVGR,L3F
NPN 150°C TJ 100nA ICBO SOT-723 Cut Tape (CT) Surface Mount
2SC6026MFVGR,L3F Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 150mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
2SC6026MFVGR,L3F Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
2SC6026MFVGR,L3F Applications
There are a lot of Toshiba Semiconductor and Storage
2SC6026MFVGR,L3F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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