2SC5876T106Q
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- Mfr.Part #
- 2SC5876T106Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A UMT3
- Stock
- 1,942
- In Stock ：
- 1,942
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 150mV
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Contact Plating :
- Copper, Silver, Tin
- Element Configuration :
- Single
- Turn Off Time-Max (toff) :
- 210ns
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 120
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Voltage - Rated DC :
- 60V
- Package / Case :
- SC-70, SOT-323
- Factory Lead Time :
- 10 Weeks
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Transition Frequency :
- 300MHz
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 60V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 500mA
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Max Collector Current :
- 500mA
- Pbfree Code :
- yes
- Pin Count :
- 3
- Turn On Time-Max (ton) :
- 70ns
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 300MHz
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Part Number :
- 2SC5876
- Published :
- 2007
- Continuous Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Datasheets
- 2SC5876T106Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SC5876T106Q Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 50mA 2V.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
2SC5876T106Q Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz
2SC5876T106Q Applications
There are a lot of ROHM Semiconductor
2SC5876T106Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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