2SC5826TV2Q
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- Mfr.Part #
- 2SC5826TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A ATV
- Stock
- 4,795
- In Stock ：
- 4,795
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- ECCN Code :
- EAR99
- Published :
- 2011
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- JESD-30 Code :
- R-PSIP-T3
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 2V
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 60V
- Current - Collector (Ic) (Max) :
- 3A
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 200MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 3A
- Mounting Type :
- Through Hole
- Package / Case :
- 3-SIP
- Transistor Application :
- SWITCHING
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 500mV
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 1W
- HTS Code :
- 8541.29.00.75
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SC5826TV2Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Reel (TR) Through Hole
2SC5826TV2Q Overview
DC current gain in this device equals 120 @ 100mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 200MHz.In extreme cases, the collector current can be as low as 3A volts.
2SC5826TV2Q Features
the DC current gain for this device is 120 @ 100mA 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2SC5826TV2Q Applications
There are a lot of ROHM Semiconductor
2SC5826TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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