2SC5824T100Q
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- Mfr.Part #
- 2SC5824T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A MPT3
- Stock
- 11,623
- In Stock ：
- 11,623
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Contact Plating :
- Copper, Tin
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- ECCN Code :
- EAR99
- Width :
- 2.7mm
- Published :
- 2013
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Length :
- 4.7mm
- Package / Case :
- TO-243AA
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Base Part Number :
- 2SC5824
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Collector Emitter Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 200MHz
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Number of Pins :
- 4
- Height :
- 1.4mm
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Power Dissipation :
- 2W
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Frequency :
- 10MHz
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 3A
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- hFE Min :
- 120
- Time@Peak Reflow Temperature-Max (s) :
- 10
- JESD-30 Code :
- R-PSSO-F3
- JESD-609 Code :
- e2
- Pin Count :
- 3
- Current Rating :
- 3A
- Continuous Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 2V
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Transition Frequency :
- 200MHz
- Voltage - Rated DC :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- NPN
- Datasheets
- 2SC5824T100Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC5824T100Q Overview
This device has a DC current gain of 120 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500V.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 200MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 3A volts is possible.
2SC5824T100Q Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of 500V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 200MHz
2SC5824T100Q Applications
There are a lot of ROHM Semiconductor
2SC5824T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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