2SC5662T2LN
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- Mfr.Part #
- 2SC5662T2LN
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 11V 0.05A VMT3
- Stock
- 22,616
- In Stock ：
- 22,616
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 3V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 10mA
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 3.2 GHz
- Pin Count :
- 3
- Max Collector Current :
- 50mA
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Collector-Base Capacitance-Max :
- 1.5pF
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Highest Frequency Band :
- S B
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 3200MHz
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- HTS Code :
- 8541.21.00.75
- Max Power Dissipation :
- 150mW
- hFE Min :
- 56
- Base Part Number :
- 2SC5662
- JESD-609 Code :
- e2
- Package / Case :
- SOT-723
- Published :
- 2010
- Current - Collector (Ic) (Max) :
- 50mA
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 500mV
- Terminal Form :
- Flat
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Breakdown Voltage :
- 11V
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 56 @ 5mA 10V
- Datasheets
- 2SC5662T2LN
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5662T2LN Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 56 @ 5mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 10mA.The emitter base voltage can be kept at 3V for high efficiency.The part has a transition frequency of 3200MHz.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
2SC5662T2LN Features
the DC current gain for this device is 56 @ 5mA 10V
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
a transition frequency of 3200MHz
2SC5662T2LN Applications
There are a lot of ROHM Semiconductor
2SC5662T2LN applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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