2SC5659T2LN
- Mfr.Part #
- 2SC5659T2LN
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A VMT3
- Stock
- 17,259
- In Stock :
- 17,259
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 150mW
- Transition Frequency :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 56 @ 1mA 6V
- Element Configuration :
- Single
- JESD-609 Code :
- e2
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 300MHz
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Current Rating :
- 50mA
- Published :
- 2004
- Collector Base Voltage (VCBO) :
- 40V
- HTS Code :
- 8541.21.00.75
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 25V
- Base Part Number :
- 2SC5659
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 25V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Terminal Form :
- Flat
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Copper, Tin
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- hFE Min :
- 56
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 10 Weeks
- Package / Case :
- SOT-723
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 25V
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 25V
- Max Collector Current :
- 50mA
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Datasheets
- 2SC5659T2LN

NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5659T2LN Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 56 @ 1mA 6V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 10mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 50mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 50mA volts at its maximum.
2SC5659T2LN Features
the DC current gain for this device is 56 @ 1mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 300MHz
2SC5659T2LN Applications
There are a lot of ROHM Semiconductor
2SC5659T2LN applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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