2SC5658T2LR
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- Mfr.Part #
- 2SC5658T2LR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A VMT3
- Stock
- 4,360
- In Stock ：
- 4,360
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 500μm
- Contact Plating :
- Copper, Tin
- Continuous Collector Current :
- 150mA
- Power Dissipation :
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Current Rating :
- 150mA
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 400mV
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Published :
- 2001
- Frequency :
- 180MHz
- JESD-609 Code :
- e2
- Terminal Form :
- Flat
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 50V
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Width :
- 800μm
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Base Part Number :
- 2SC5658
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 50V
- Transition Frequency :
- 180MHz
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 180MHz
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Length :
- 1.2mm
- Factory Lead Time :
- 13 Weeks
- Number of Pins :
- 3
- Max Collector Current :
- 150mA
- Emitter Base Voltage (VEBO) :
- 7V
- Voltage - Rated DC :
- 50V
- Max Power Dissipation :
- 150mW
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 50V
- hFE Min :
- 180
- Package / Case :
- SOT-723
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SC5658T2LR
2SC5658T2LR Documents
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5658T2LR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Continuous collector voltages of 150mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 150mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 150mA volts.
2SC5658T2LR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC5658T2LR Applications
There are a lot of ROHM Semiconductor
2SC5658T2LR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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