2SC5658T2LQ
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- Mfr.Part #
- 2SC5658T2LQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A VMT3
- Stock
- 17,715
- In Stock ：
- 17,715
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 400mV
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Base Part Number :
- 2SC5658
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Width :
- 800μm
- ECCN Code :
- EAR99
- Height :
- 500μm
- Packaging :
- Tape and Reel (TR)
- Length :
- 1.2mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Terminal Form :
- Flat
- hFE Min :
- 120
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 50V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 50V
- Gain Bandwidth Product :
- 180MHz
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Max Frequency :
- 180MHz
- Continuous Collector Current :
- 150mA
- Collector Base Voltage (VCBO) :
- 60V
- Voltage - Rated DC :
- 50V
- Max Collector Current :
- 150mA
- Power Dissipation :
- 150mW
- Number of Pins :
- 3
- Package / Case :
- SOT-723
- Collector Emitter Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current Rating :
- 150mA
- HTS Code :
- 8541.21.00.75
- Factory Lead Time :
- 13 Weeks
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e2
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Contact Plating :
- Copper, Tin
- Published :
- 2011
- Transition Frequency :
- 180MHz
- Max Power Dissipation :
- 150mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Element Configuration :
- Single
- Datasheets
- 2SC5658T2LQ
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5658T2LQ Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 150mA to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 150mA current rating.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 150mA volts.
2SC5658T2LQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC5658T2LQ Applications
There are a lot of ROHM Semiconductor
2SC5658T2LQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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