2SC5585TL
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- Mfr.Part #
- 2SC5585TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 12V 0.5A EMT3
- Stock
- 17,805
- In Stock ：
- 17,805
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Power Dissipation :
- 150mW
- Base Part Number :
- 2SC5585
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 10mA 2V
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- hFE Min :
- 270
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Terminal Finish :
- TIN SILVER COPPER
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 150mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- Gain Bandwidth Product :
- 320MHz
- Frequency :
- 320MHz
- Transition Frequency :
- 320MHz
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 13 Weeks
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 12V
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Voltage - Rated DC :
- 12V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Published :
- 2004
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Package / Case :
- SC-75, SOT-416
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 12V
- Max Breakdown Voltage :
- 12V
- Current Rating :
- 500mA
- Contact Plating :
- Copper, Silver, Tin
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 15V
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Continuous Collector Current :
- 500mA
- Datasheets
- 2SC5585TL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
2SC5585TL Overview
DC current gain in this device equals 270 @ 10mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 200mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 320MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 500mA volts.
2SC5585TL Features
the DC current gain for this device is 270 @ 10mA 2V
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 320MHz
2SC5585TL Applications
There are a lot of ROHM Semiconductor
2SC5585TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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