2SC1741ASTPQ
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- Mfr.Part #
- 2SC1741ASTPQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-72 Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A SPT
- Stock
- 1,788
- In Stock ：
- 1,788
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 250MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Package / Case :
- SC-72 Formed Leads
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 50V
- Transition Frequency :
- 250MHz
- Power - Max :
- 300mW
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 50V
- Collector Emitter Voltage (VCEO) :
- 200mV
- Max Power Dissipation :
- 830mW
- Mounting Type :
- Through Hole
- Max Collector Current :
- 1A
- Number of Terminations :
- 3
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- HTS Code :
- 8541.21.00.75
- JESD-30 Code :
- R-PSIP-T3
- Published :
- 2004
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Terminal Finish :
- TIN SILVER COPPER
- Time@Peak Reflow Temperature-Max (s) :
- 10
- hFE Min :
- 120
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 40V
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 72
- Base Part Number :
- 2SC1741A
- Current Rating :
- 500mA
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SC1741ASTPQ
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-72 Formed Leads Tape & Box (TB) Through Hole
2SC1741ASTPQ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 15mA, 150mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 1A volts.
2SC1741ASTPQ Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 250MHz
2SC1741ASTPQ Applications
There are a lot of ROHM Semiconductor
2SC1741ASTPQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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