2SB1733TL
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- Mfr.Part #
- 2SB1733TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A TUMT3
- Stock
- 66,319
- In Stock ：
- 66,319
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Width :
- 1.8mm
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Published :
- 2013
- Collector Base Voltage (VCBO) :
- -30V
- Factory Lead Time :
- 13 Weeks
- Collector Emitter Saturation Voltage :
- -150mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Mounting Type :
- Surface Mount
- Max Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Pin Count :
- 3
- Max Power Dissipation :
- 800mW
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Length :
- 2.1mm
- Element Configuration :
- Single
- Height :
- 820μm
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Gain Bandwidth Product :
- 400MHz
- Max Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- -6V
- Mount :
- Surface Mount
- Frequency - Transition :
- 320MHz
- Base Part Number :
- 2SB1733
- Contact Plating :
- Copper, Tin
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- 3-SMD, Flat Lead
- JESD-609 Code :
- e2
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 270
- Pbfree Code :
- yes
- Max Collector Current :
- 1A
- Transition Frequency :
- 320MHz
- Datasheets
- 2SB1733TL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
2SB1733TL Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -150mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 25mA, 500mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.320MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
2SB1733TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 320MHz
2SB1733TL Applications
There are a lot of ROHM Semiconductor
2SB1733TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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