2SB1710TL
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- Mfr.Part #
- 2SB1710TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A TSMT3
- Stock
- 24,075
- In Stock ：
- 24,075
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 320MHz
- Max Breakdown Voltage :
- 30V
- Contact Plating :
- Copper, Silver, Tin
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 1A
- Published :
- 2003
- Max Frequency :
- 100MHz
- Continuous Collector Current :
- -1A
- Emitter Base Voltage (VEBO) :
- -6V
- Number of Elements :
- 1
- Height :
- 950μm
- Mount :
- Surface Mount
- Max Power Dissipation :
- 500mW
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Collector Base Voltage (VCBO) :
- -30V
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Terminal Finish :
- TIN SILVER COPPER
- Element Configuration :
- Single
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Factory Lead Time :
- 20 Weeks
- Transition Frequency :
- 320MHz
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 1.8mm
- ECCN Code :
- EAR99
- Length :
- 3mm
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Package / Case :
- SC-96
- JESD-609 Code :
- e1
- Voltage - Rated DC :
- -30V
- Polarity/Channel Type :
- PNP
- Current Rating :
- -1A
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- -150mV
- Transistor Type :
- PNP
- hFE Min :
- 270
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- Pin Count :
- 3
- Base Part Number :
- 2SB1710
- Datasheets
- 2SB1710TL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-96 Tape & Reel (TR) Surface Mount
2SB1710TL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 25mA, 500mA.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 320MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1A volts.
2SB1710TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 320MHz
2SB1710TL Applications
There are a lot of ROHM Semiconductor
2SB1710TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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