2SB1690KT146
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- Mfr.Part #
- 2SB1690KT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 12V 2A SMT3
- Stock
- 6,013
- In Stock ：
- 6,013
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- -2A
- Pin Count :
- 3
- Contact Plating :
- Copper, Silver, Tin
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Breakdown Voltage :
- 12V
- Collector Base Voltage (VCBO) :
- -15V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Collector Emitter Saturation Voltage :
- -120mV
- Factory Lead Time :
- 13 Weeks
- Radiation Hardening :
- No
- Max Collector Current :
- 2A
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Published :
- 2004
- Polarity/Channel Type :
- PNP
- Continuous Collector Current :
- -2A
- Collector Emitter Breakdown Voltage :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 12V
- Height :
- 1mm
- Base Part Number :
- 2SB1690
- Max Frequency :
- 100MHz
- Terminal Finish :
- TIN SILVER COPPER
- Max Power Dissipation :
- 200mW
- Length :
- 2.9mm
- Transition Frequency :
- 360MHz
- Emitter Base Voltage (VEBO) :
- -6V
- Number of Elements :
- 1
- HTS Code :
- 8541.21.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 50mA, 1A
- hFE Min :
- 270
- Terminal Position :
- Dual
- Width :
- 1.6mm
- Gain Bandwidth Product :
- 360MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- -12V
- Datasheets
- 2SB1690KT146
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SB1690KT146 Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -120mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 50mA, 1A.A -2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 360MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SB1690KT146 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
a transition frequency of 360MHz
2SB1690KT146 Applications
There are a lot of ROHM Semiconductor
2SB1690KT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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