2SB1689T106
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- Mfr.Part #
- 2SB1689T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 12V 1.5A UMT3
- Stock
- 5,324
- In Stock ：
- 5,324
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 13 Weeks
- Collector Base Voltage (VCBO) :
- -15V
- Gain Bandwidth Product :
- 400MHz
- Height :
- 900μm
- Terminal Finish :
- TIN SILVER COPPER
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Breakdown Voltage :
- 12V
- Contact Plating :
- Copper, Silver, Tin
- Terminal Position :
- Dual
- Voltage - Rated DC :
- -12V
- Length :
- 2.1mm
- Radiation Hardening :
- No
- Published :
- 2004
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 12V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- SC-70, SOT-323
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- hFE Min :
- 270
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Number of Pins :
- 3
- Max Frequency :
- 100MHz
- Pbfree Code :
- yes
- Continuous Collector Current :
- -1.5A
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Base Part Number :
- 2SB1689
- Width :
- 1.35mm
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -110mV
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 400MHz
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 1.5A
- Collector Emitter Voltage (VCEO) :
- 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Current Rating :
- -1.5A
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200mW
- Lead Free :
- Lead Free
- Datasheets
- 2SB1689T106
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SB1689T106 Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -110mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 25mA, 500mA.Maintaining the continuous collector voltage at -1.5A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).400MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
2SB1689T106 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -110mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 400MHz
2SB1689T106 Applications
There are a lot of ROHM Semiconductor
2SB1689T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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