2SB1386T100Q
- Mfr.Part #
- 2SB1386T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 5A MPT3
- Stock
- 8,458
- In Stock :
- 8,458
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 4A
- Max Power Dissipation :
- 500mW
- Gain Bandwidth Product :
- 120MHz
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Breakdown Voltage :
- 20V
- Transistor Type :
- PNP
- Power - Max :
- 2W
- Number of Elements :
- 1
- Transition Frequency :
- 120MHz
- Collector Base Voltage (VCBO) :
- -30V
- Radiation Hardening :
- No
- Terminal Finish :
- TIN COPPER
- Contact Plating :
- Copper, Tin
- Max Collector Current :
- 5A
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 10 Weeks
- Emitter Base Voltage (VEBO) :
- -6V
- Lead Free :
- Lead Free
- HTS Code :
- 8541.21.00.75
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Package / Case :
- TO-243AA
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Base Part Number :
- 2SB1386
- Current Rating :
- -5A
- Termination :
- SMD/SMT
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Polarity/Channel Type :
- PNP
- hFE Min :
- 82
- JESD-609 Code :
- e2
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- VCEsat-Max :
- 1 V
- Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 1V
- Collector Emitter Breakdown Voltage :
- 20V
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Voltage - Rated DC :
- -20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Datasheets
- 2SB1386T100Q

PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1386T100Q Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100mA, 4A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.A transition frequency of 120MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 5A volts at its maximum.
2SB1386T100Q Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at -6V
the current rating of this device is -5A
a transition frequency of 120MHz
2SB1386T100Q Applications
There are a lot of ROHM Semiconductor
2SB1386T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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