2SB1302T-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Frequency :

320MHz

Transistor Type :

PNP

Terminal Form :

Flat

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Vce Saturation (Max) @ Ib, Ic :

500mV @ 60mA, 3A

Max Power Dissipation :

1.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

JESD-609 Code :

e6

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Current - Collector Cutoff (Max) :

500nA ICBO

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

20V

Polarity/Channel Type :

PNP

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Published :

2005

Collector Base Voltage (VCBO) :

25V

Package / Case :

TO-243AA

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

1.3W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

4.5mm

Transistor Element Material :

SILICON

Pbfree Code :

yes

Factory Lead Time :

2 Weeks

Surface Mount :

yes

Collector Emitter Voltage (VCEO) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Case Connection :

COLLECTOR

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Width :

2.5mm

Max Collector Current :

5A

Height :

1.5mm

Current - Collector (Ic) (Max) :

5A

Packaging :

Tape and Reel (TR)

Transition Frequency :

320MHz

Reach Compliance Code :

not_compliant

Collector Emitter Saturation Voltage :

-500mV