2SB1260T100R
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- Mfr.Part #
- 2SB1260T100R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A MPT3
- Stock
- 12,236
- In Stock ：
- 12,236
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Voltage - Rated DC :
- -80V
- Pbfree Code :
- yes
- Terminal Form :
- Flat
- Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Contact Plating :
- Copper, Tin
- Max Power Dissipation :
- 2W
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- JESD-609 Code :
- e2
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- hFE Min :
- 82
- Max Collector Current :
- 1A
- Continuous Collector Current :
- -1A
- Published :
- 1999
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 80V
- Frequency :
- 100MHz
- Terminal Finish :
- TIN COPPER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Number of Elements :
- 1
- Current Rating :
- -1A
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- JESD-30 Code :
- R-PSSO-F3
- Emitter Base Voltage (VEBO) :
- -5V
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 80V
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Number of Pins :
- 4
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Factory Lead Time :
- 10 Weeks
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-243AA
- Base Part Number :
- 2SB1260
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SB1260T100R
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1260T100R Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 100mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 1A volts at its maximum.
2SB1260T100R Features
the DC current gain for this device is 180 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
2SB1260T100R Applications
There are a lot of ROHM Semiconductor
2SB1260T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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