2SB1237TV2Q
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- Mfr.Part #
- 2SB1237TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS PNP 32V 1A ATV
- Stock
- 5,560
- In Stock ：
- 5,560
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1A
- Collector Emitter Breakdown Voltage :
- 32V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Published :
- 2010
- Gain Bandwidth Product :
- 150MHz
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Voltage - Rated DC :
- -32V
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Package / Case :
- 3-SIP
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -200mV
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- hFE Min :
- 120
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Current Rating :
- -1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Collector Emitter Voltage (VCEO) :
- 500mV
- Collector Base Voltage (VCBO) :
- -40V
- JESD-30 Code :
- R-PSIP-T3
- Packaging :
- Tape and Box (TB)
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 150MHz
- Max Power Dissipation :
- 1W
- Datasheets
- 2SB1237TV2Q
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP 3-SIP Tape & Box (TB) Through Hole
2SB1237TV2Q Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SB1237TV2Q Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
2SB1237TV2Q Applications
There are a lot of ROHM Semiconductor
2SB1237TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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