2SB1216S-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2012

Factory Lead Time :

2 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

130MHz

JESD-609 Code :

e6

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Height :

2.3mm

Number of Terminations :

2

Frequency :

180MHz

Number of Pins :

3

Power Dissipation :

1W

Width :

5.5mm

Transistor Application :

SWITCHING

Transistor Type :

PNP

Max Collector Current :

4A

Frequency - Transition :

130MHz

Terminal Finish :

Tin/Bismuth (Sn/Bi)

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 500mA 5V

Current - Collector Cutoff (Max) :

1μA ICBO

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Polarity/Channel Type :

PNP

Length :

6.5mm

Element Configuration :

Single

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Base Part Number :

2SB1216

Number of Elements :

1

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

-500mV

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Max Power Dissipation :

1W

Emitter Base Voltage (VEBO) :

6V

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

100V

Collector Base Voltage (VCBO) :

120V

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

100V

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

hFE Min :

70

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Pin Count :

3