2SB1197KT146Q
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- Mfr.Part #
- 2SB1197KT146Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.8A SMT3
- Stock
- 110
- In Stock ：
- 110
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- HTS Code :
- 8541.21.00.75
- Number of Pins :
- 3
- Max Power Dissipation :
- 200mW
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -40V
- Transition Frequency :
- 200MHz
- hFE Min :
- 120
- Power - Max :
- 200mW
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- VCEsat-Max :
- 0.5 V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 200MHz
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Pin Count :
- 3
- Base Part Number :
- 2SB1197
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 500mV
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Max Collector Current :
- 800mA
- Collector Emitter Breakdown Voltage :
- 32V
- Max Breakdown Voltage :
- 32V
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Continuous Collector Current :
- -800mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current Rating :
- -800mA
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- -32V
- Contact Plating :
- Copper, Silver, Tin
- Datasheets
- 2SB1197KT146Q
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SB1197KT146Q Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -800mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -800mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 32V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.
2SB1197KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
2SB1197KT146Q Applications
There are a lot of ROHM Semiconductor
2SB1197KT146Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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