2SB1132T100R
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- Mfr.Part #
- 2SB1132T100R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 32V 1A MPT3
- Stock
- 5,908
- In Stock ：
- 5,908
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Current Rating :
- -1A
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 40V
- Emitter Base Voltage (VEBO) :
- -5V
- Gain Bandwidth Product :
- 150MHz
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 1997
- Collector Emitter Saturation Voltage :
- -200mV
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- VCEsat-Max :
- 0.5 V
- Voltage - Rated DC :
- -32V
- Continuous Collector Current :
- -1A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Power Dissipation :
- 2W
- Collector-Base Capacitance-Max :
- 30pF
- Package / Case :
- TO-243AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 10
- JESD-609 Code :
- e2
- Terminal Finish :
- TIN COPPER
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 32V
- Base Part Number :
- 2SB1132
- Max Power Dissipation :
- 2W
- Factory Lead Time :
- 7 Weeks
- Contact Plating :
- Copper, Tin
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 150MHz
- hFE Min :
- 82
- Number of Pins :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Transition Frequency :
- 150MHz
- Pin Count :
- 3
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 32V
- Collector Emitter Breakdown Voltage :
- 32V
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSSO-F3
- Mounting Type :
- Surface Mount
- Datasheets
- 2SB1132T100R
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1132T100R Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 100mA 3V DC current gain.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -1A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 1A volts.
2SB1132T100R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
2SB1132T100R Applications
There are a lot of ROHM Semiconductor
2SB1132T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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