2SAR523EBTL
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- Mfr.Part #
- 2SAR523EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A EMT3F
- Stock
- 14,700
- In Stock ：
- 14,700
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time :
- 13 Weeks
- Published :
- 2015
- Number of Terminations :
- 3
- Max Power Dissipation :
- 150mW
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -150mV
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 100mA
- Gain Bandwidth Product :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 300MHz
- Package / Case :
- SC-89, SOT-490
- hFE Min :
- 120
- Power - Max :
- 150mW
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Base Voltage (VCBO) :
- -50V
- Collector Emitter Voltage (VCEO) :
- 400mV
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- -5V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Pin Count :
- 3
- Datasheets
- 2SAR523EBTL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SAR523EBTL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
2SAR523EBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
2SAR523EBTL Applications
There are a lot of ROHM Semiconductor
2SAR523EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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