2SAR512PT100
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- Mfr.Part #
- 2SAR512PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 2A MPT3
- Stock
- 8,037
- In Stock ：
- 8,037
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -200mV
- Transition Frequency :
- 430MHz
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-243AA
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 2W
- Collector Emitter Voltage (VCEO) :
- 400mV
- Number of Elements :
- 1
- Terminal Form :
- Flat
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- hFE Min :
- 200
- JESD-609 Code :
- e2
- Gain Bandwidth Product :
- 430MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Terminal Finish :
- TIN COPPER
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Published :
- 2013
- Collector Base Voltage (VCBO) :
- -30V
- Collector Emitter Breakdown Voltage :
- 30V
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 35mA, 700mA
- Factory Lead Time :
- 9 Weeks
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -6V
- Power - Max :
- 2W
- Reach Compliance Code :
- not_compliant
- Max Collector Current :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Datasheets
- 2SAR512PT100
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SAR512PT100 Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 35mA, 700mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.430MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
2SAR512PT100 Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 35mA, 700mA
the emitter base voltage is kept at -6V
a transition frequency of 430MHz
2SAR512PT100 Applications
There are a lot of ROHM Semiconductor
2SAR512PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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