2SA854STPR
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- Mfr.Part #
- 2SA854STPR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-72 Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.5A SPT
- Stock
- 12,275
- In Stock ：
- 12,275
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 200MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 50mA, 500mA
- Max Power Dissipation :
- 300mW
- Element Configuration :
- Single
- Number of Elements :
- 1
- hFE Min :
- 180
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Package / Case :
- SC-72 Formed Leads
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 32V
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- Current Rating :
- -500mA
- HTS Code :
- 8541.21.00.75
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Current - Collector (Ic) (Max) :
- 500mA
- Terminal Finish :
- TIN SILVER COPPER
- Max Collector Current :
- 500mA
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Box (TB)
- Published :
- 2004
- Gain Bandwidth Product :
- 200MHz
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- -32V
- Collector Base Voltage (VCBO) :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 600mV
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Datasheets
- 2SA854STPR
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP SC-72 Formed Leads Tape & Box (TB) Through Hole
2SA854STPR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 100mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 500mA volts.
2SA854STPR Features
the DC current gain for this device is 180 @ 100mA 3V
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA854STPR Applications
There are a lot of ROHM Semiconductor
2SA854STPR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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