2PD1820AS,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

200mW

Collector Base Voltage (VCBO) :

60V

Transistor Type :

NPN

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 30mA, 300mA

Pin Count :

3

Published :

2009

Element Configuration :

Single

Max Breakdown Voltage :

50V

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

50V

Max Collector Current :

500mA

Current - Collector Cutoff (Max) :

10nA ICBO

hFE Min :

170

Operating Temperature :

150°C TJ

Package / Case :

SC-70, SOT-323

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Contact Plating :

Tin

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

150MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

170 @ 150mA 10V

Gain Bandwidth Product :

150MHz

Transition Frequency :

150MHz

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Base Part Number :

2PD1820

Lead Free :

Lead Free

Number of Elements :

1

Mount :

Surface Mount

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Transistor Element Material :

SILICON

Power Dissipation :

200mW

Series :

Automotive, AEC-Q101