2PB709BSL,215
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- Mfr.Part #
- 2PB709BSL,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.2A TO236AB
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Series :
- Automotive, AEC-Q101
- Transistor Element Material :
- SILICON
- hFE Min :
- 210
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Number of Elements :
- 1
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 250mW
- Collector Emitter Breakdown Voltage :
- 50V
- Frequency :
- 200MHz
- Power Dissipation :
- 250mW
- Factory Lead Time :
- 4 Weeks
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 200mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 50V
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 200mA
- Transition Frequency :
- 200MHz
- Terminal Form :
- Gull wing
- Datasheets
- 2PB709BSL,215
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709BSL,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 200mA volts.
2PB709BSL,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2PB709BSL,215 Applications
There are a lot of Nexperia USA Inc.
2PB709BSL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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