2N918UB
- Mfr.Part #
- 2N918UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.05A UB
- Stock
- 37,381
- In Stock :
- 37,381
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Element Material :
- SILICON
- Pbfree Code :
- No
- Polarity/Channel Type :
- NPN
- Package / Case :
- 3-SMD, No Lead
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 15V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-XDSO-N3
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Terminal Finish :
- TIN LEAD
- Collector Emitter Voltage (VCEO) :
- 400mV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- Single
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 30V
- Max Collector Current :
- 50mA
- Factory Lead Time :
- 12 Weeks
- Published :
- 2007
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Power - Max :
- 200mW
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 3mA 1V
- HTS Code :
- 8541.21.00.95
- Terminal Position :
- Dual
- Datasheets
- 2N918UB
NPN -65°C~200°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
2N918UB Overview
This device has a DC current gain of 20 @ 3mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A maximum collector current of 50mA volts is possible.
2N918UB Features
the DC current gain for this device is 20 @ 3mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
2N918UB Applications
There are a lot of Microsemi Corporation
2N918UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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