2N6989

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Contact Plating :

Lead, Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Mounting Type :

Through Hole

Number of Elements :

4

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

75V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Configuration :

Single

Package / Case :

14-DIP (0.300, 7.62mm)

Factory Lead Time :

22 Weeks

Current - Collector Cutoff (Max) :

10μA ICBO

JEDEC-95 Code :

TO-116

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

4 NPN (Quad)

Emitter Base Voltage (VEBO) :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-65°C~200°C TJ

Power Dissipation :

1.5W

Max Collector Current :

800mA

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Terminal Position :

Dual

Published :

2007

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

1.5W

Collector Emitter Voltage (VCEO) :

50V

JESD-609 Code :

e0

Pbfree Code :

No

Mount :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Pins :

14

Number of Terminations :

14

Packaging :

Bulk

Polarity :

NPN

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant