2N6583

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Mfr.Part #
2N6583
Manufacturer
Microchip Technology
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
POWER BJT
Stock
39,105
In Stock :
39,105

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-
Technology :
Si
Package Shape :
Round
Vce Saturation (Max) @ Ib, Ic :
-
Manufacturer :
Microchip
Power Dissipation-Max (Abs) :
71 W
Number of Terminals :
2
Terminal Form :
PIN/PEG
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Voltage - Collector Emitter Breakdown (Max) :
400 V
Subcategory :
Transistors
Product Type :
BJTs - Bipolar Transistors
Number of Elements :
1
Terminal Position :
BOTTOM
Mounting Type :
Through Hole
Frequency - Transition :
-
Package :
Bulk
Package / Case :
TO-204AA, TO-3
JEDEC-95 Code :
TO-3
Pin Count :
2
Transistor Type :
NPN
Product Status :
Active
Supplier Device Package :
TO-204AD (TO-3)
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Configuration :
Single
JESD-30 Code :
O-MBFM-P2
Pbfree Code :
No
Current - Collector Cutoff (Max) :
-
Collector-Emitter Voltage-Max :
400 V
Surface Mount :
No
Transistor Polarity :
NPN
Reach Compliance Code :
Unknown
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Current-Max (IC) :
10 A
Terminal Finish :
Tin/Lead (Sn/Pb)
Series :
-
Product Category :
Bipolar Transistors - BJT
Brand :
Microchip Technology
JESD-609 Code :
e0
DC Current Gain-Min (hFE) :
7
Current - Collector (Ic) (Max) :
10 A
Power - Max :
125 W
Polarity/Channel Type :
NPN
Datasheets
2N6583
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N6583 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-, Mounting Type:Through Hole, Package / Case:TO-204AA, TO-3, 2N6583 pinout, 2N6583 datasheet PDF, 2N6583 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N6583 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - - 1 Elements SILICON NPN TO-204AA, TO-3 Through Hole

2N6583 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is -.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is -.The product comes in the supplier device package of TO-204AD (TO-3).There is a setting of 400 V for maximal collector-Emitter voltage.A 400 V maximal voltage - Collector Emitter Breakdown is present in the device.

2N6583 Features


the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-204AD (TO-3)


2N6583 Applications


There are a lot of Microchip Technology
2N6583 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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