2N6490
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- Mfr.Part #
- 2N6490
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 15A TO220AB
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1.8W
- Collector Base Voltage (VCBO) :
- 70V
- Max Power Dissipation :
- 1.8W
- Current Rating :
- 15A
- Collector Emitter Saturation Voltage :
- 3.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 5A 4V
- Surface Mount :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tube
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Frequency :
- 5MHz
- Factory Lead Time :
- 5 Weeks
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Transition Frequency :
- 5MHz
- Operating Temperature :
- -65°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 5A, 15A
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 60V
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Length :
- 10.28mm
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 5MHz
- Height :
- 15.75mm
- Max Collector Current :
- 15A
- hFE Min :
- 20
- JESD-609 Code :
- e3
- Base Part Number :
- 2N6490
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2001
- Width :
- 4.82mm
- Current - Collector Cutoff (Max) :
- 1mA
- Package / Case :
- TO-220-3
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- 2N6490
PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6490G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 5A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 3.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3.5V @ 5A, 15A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 5MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
2N6490G Features
the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz
2N6490G Applications
There are a lot of ON Semiconductor
2N6490G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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