2N6488G
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- Mfr.Part #
- 2N6488G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 15A TO220
- Stock
- 6,498
- In Stock ：
- 6,498
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2006
- Power Dissipation :
- 40W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 5A 4V
- Max Collector Current :
- 15A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 80V
- Factory Lead Time :
- 6 Weeks
- Gain Bandwidth Product :
- 5MHz
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Width :
- 4.826mm
- Surface Mount :
- No
- Height :
- 15.748mm
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 3.5V
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- hFE Min :
- 20
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Frequency :
- 5MHz
- Max Power Dissipation :
- 1.8W
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Current Rating :
- 15A
- JESD-609 Code :
- e3
- Length :
- 10.2616mm
- Package / Case :
- TO-220-3
- Pin Count :
- 3
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 1mA
- Weight :
- 4.535924g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 5A, 15A
- Transition Frequency :
- 5MHz
- Base Part Number :
- 2N6488
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 80V
- Collector Base Voltage (VCBO) :
- 90V
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Datasheets
- 2N6488G
NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
2N6488G Overview
In this device, the DC current gain is 20 @ 5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 5A, 15A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 5MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
2N6488G Features
the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz
2N6488G Applications
There are a lot of ON Semiconductor
2N6488G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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