2N6317
- Mfr.Part #
- 2N6317
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP 60V 7A TO-213AA
- Stock
- 20,951
- In Stock :
- 20,951
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- PIN/PEG
- Polarity/Channel Type :
- PNP
- Published :
- 2007
- JESD-30 Code :
- O-MBFM-P2
- Contact Plating :
- Lead, Tin
- Number of Terminations :
- 2
- Current - Collector Cutoff (Max) :
- 500μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 7A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 2.5A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 1.75A, 7A
- HTS Code :
- 8541.29.00.95
- Max Power Dissipation :
- 90W
- Power - Max :
- 90W
- Reach Compliance Code :
- not_compliant
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- ECCN Code :
- EAR99
- Package / Case :
- TO-213AA, TO-66-2
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- PNP
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 2V
- Terminal Finish :
- Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
- Factory Lead Time :
- 12 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- JESD-609 Code :
- e0
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Position :
- BOTTOM
- Datasheets
- 2N6317

PNP -65°C~200°C TJ 500μA 2 Terminations SILICON PNP TO-213AA, TO-66-2 Bulk Through Hole
2N6317 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 2.5A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 1.75A, 7A.Single BJT transistor is possible to have a collector current as low as 7A volts at Single BJT transistors maximum.
2N6317 Features
the DC current gain for this device is 25 @ 2.5A 4V
the vce saturation(Max) is 2V @ 1.75A, 7A
2N6317 Applications
There are a lot of Microsemi Corporation
2N6317 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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