2N6317

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Mfr.Part #
2N6317
Manufacturer
Microchip Technology
Package / Case
TO-213AA, TO-66-2
Datasheet
Download
Description
TRANS PNP 60V 7A TO-213AA
Stock
20,951
In Stock :
20,951

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Form :
PIN/PEG
Polarity/Channel Type :
PNP
Published :
2007
JESD-30 Code :
O-MBFM-P2
Contact Plating :
Lead, Tin
Number of Terminations :
2
Current - Collector Cutoff (Max) :
500μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
7A
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 2.5A 4V
Vce Saturation (Max) @ Ib, Ic :
2V @ 1.75A, 7A
HTS Code :
8541.29.00.95
Max Power Dissipation :
90W
Power - Max :
90W
Reach Compliance Code :
not_compliant
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
ECCN Code :
EAR99
Package / Case :
TO-213AA, TO-66-2
Collector Emitter Breakdown Voltage :
60V
RoHS Status :
Non-RoHS Compliant
Transistor Type :
PNP
Mount :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Collector Emitter Voltage (VCEO) :
2V
Terminal Finish :
Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
Factory Lead Time :
12 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
Pbfree Code :
No
Transistor Element Material :
SILICON
Packaging :
Bulk
JESD-609 Code :
e0
Operating Temperature :
-65°C~200°C TJ
Terminal Position :
BOTTOM
Datasheets
2N6317
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N6317 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-213AA, TO-66-2, Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, 2N6317 pinout, 2N6317 datasheet PDF, 2N6317 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N6317 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N6317


PNP -65°C~200°C TJ 500μA 2 Terminations SILICON PNP TO-213AA, TO-66-2 Bulk Through Hole

2N6317 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 2.5A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 1.75A, 7A.Single BJT transistor is possible to have a collector current as low as 7A volts at Single BJT transistors maximum.

2N6317 Features


the DC current gain for this device is 25 @ 2.5A 4V
the vce saturation(Max) is 2V @ 1.75A, 7A


2N6317 Applications


There are a lot of Microsemi Corporation
2N6317 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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