2N6111G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

40W

Gain Bandwidth Product :

10MHz

Current - Collector Cutoff (Max) :

1mA

Packaging :

Tube

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Element Configuration :

Single

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

30V

Lead Free :

Lead Free

Pbfree Code :

yes

Transition Frequency :

10MHz

ECCN Code :

EAR99

Length :

10.28mm

Emitter Base Voltage (VEBO) :

5V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Saturation Voltage :

3.5V

Collector Emitter Breakdown Voltage :

30V

Number of Elements :

1

Published :

2007

Pin Count :

3

Width :

4.82mm

Current Rating :

-7A

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-30V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3A 4V

Number of Pins :

3

Collector Base Voltage (VCBO) :

40V

Surface Mount :

No

Frequency :

10MHz

Number of Terminations :

3

Max Collector Current :

7A

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 3A, 7A

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

Transistor Type :

PNP

Height :

15.75mm

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-220-3

Factory Lead Time :

2 Weeks

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

JESD-609 Code :

e3

Base Part Number :

2N6111

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-65°C~150°C TJ

Max Power Dissipation :

40W

Polarity/Channel Type :

PNP

hFE Min :

30