2N6111G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Power Dissipation :

40W

Operating Temperature :

-65°C~150°C TJ

Voltage - Rated DC :

-30V

Number of Elements :

1

Number of Terminations :

3

Pin Count :

3

Transition Frequency :

10MHz

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

40V

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

40W

Time@Peak Reflow Temperature-Max (s) :

40

Width :

4.82mm

Transistor Type :

PNP

Surface Mount :

No

JESD-609 Code :

e3

Gain Bandwidth Product :

10MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3A 4V

Collector Emitter Saturation Voltage :

3.5V

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

1mA

Pbfree Code :

yes

Packaging :

Tube

Length :

10.28mm

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Case Connection :

COLLECTOR

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 3A, 7A

Published :

2007

Transistor Application :

SWITCHING

Base Part Number :

2N6111

Current Rating :

-7A

ECCN Code :

EAR99

Factory Lead Time :

2 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

10MHz

Height :

15.75mm

Polarity/Channel Type :

PNP

hFE Min :

30

Max Collector Current :

7A

Collector Emitter Voltage (VCEO) :

30V