2N6111G
- Mfr.Part #
- 2N6111G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 7A TO220
- Stock
- 2,187
- In Stock :
- 2,187
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 30
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 30V
- Power Dissipation :
- 40W
- Collector Emitter Saturation Voltage :
- 3.5V
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 3A, 7A
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2007
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 1mA
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -30V
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 10MHz
- Number of Pins :
- 3
- Height :
- 15.75mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Transition Frequency :
- 10MHz
- Max Power Dissipation :
- 40W
- REACH SVHC :
- No SVHC
- Frequency :
- 10MHz
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Through Hole
- Current Rating :
- -7A
- Length :
- 10.28mm
- Max Collector Current :
- 7A
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 3A 4V
- Packaging :
- Tube
- Width :
- 4.82mm
- JEDEC-95 Code :
- TO-220AB
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- 2N6111
- Package / Case :
- TO-220-3
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2N6111G

PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6111G Overview
DC current gain in this device equals 30 @ 3A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 3A, 7A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -7A current rating.As a result, the part has a transition frequency of 10MHz.In extreme cases, the collector current can be as low as 7A volts.
2N6111G Features
the DC current gain for this device is 30 @ 3A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is -7A
a transition frequency of 10MHz
2N6111G Applications
There are a lot of ON Semiconductor
2N6111G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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